Supersonic molecular beam etching of surfaces
US5286331A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1991 |
| Grant date | Feb 15, 1994 |
| Priority date | — |
| Expiry date | Nov 1, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In supersonic molecular beam etching, the reactivity of the etchant gas and substrate surface is improved by creating etchant gas molecules with high internal energies through chemical reactions of precursor molecules, forming clusters of etchant gas molecules in a reaction chamber, expanding the etchant gas molecules and clusters of etchant gas molecules through a nozzle into a vacuum, and directing the molecules and clusters of molecules onto a substrate. Translational energy of the molecules and clusters of molecules can be improved by seeding with inert gas molecules. The process provides improved controllability, surface purity, etch selectivity and anisotropy. Etchant molecules may also be expanded directly (without reaction in a chamber) to produce clusters whose translational energy can be increased through expansion with a seeding gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.