Plasma etching apparatus with conductive means for inhibiting arcing
US5292399A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1992 |
| Grant date | Mar 8, 1994 |
| Priority date | — |
| Expiry date | Jan 8, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S156/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved plasma etching apparatus is disclosed for the plasma etching of semiconductor wafers. The improvement includes conductive means for inhibiting arcing from electrical charges accumulating on one or more non-conductive protective surfaces on members at rf potential within the apparatus, such as the metal pedestal which supports the wafer being etched and supplies the rf potential to it, and the clamping ring mechanism which clamps the wafer to the pedestal. The conductive means may include one or more conductive plugs extending through one or more of the protective surfaces or a conductive ring surrounding the wafer on the top surface of the metal pedestal. The conductive material is selected from the class consisting of carbon; a silicide; titanium nitride; a carbide; and a semiconductor such as silicon doped to provide a resistivity ranging from about 0.001 to about 20 ohm-cm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.