Stage having electrostatic chuck and plasma processing apparatus using same
US5382311A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Dec 17, 1993 |
| Grant date | Jan 17, 1995 |
| Priority date | — |
| Expiry date | Dec 17, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.