Method of depositing conductors in high aspect ratio apertures using a collimator
US5401675A · kind A · utility
39Cited by
16References
12Claims
0Family size
Inventors
Key dates
| Filing date | Mar 24, 1993 |
| Grant date | Mar 28, 1995 |
| Priority date | — |
| Expiry date | Mar 24, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/4076
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A process for sputter deposition wherein high aspect ratio apertures are coated with conductive films exhibiting low bulk resistivity, low impurity concentrations, and regular morphologies. A collimator is used having an aspect ratio that approximates the aspect ratio of the apertures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.