Selectivity for etching an oxide over a nitride
US5423945A · kind A · utility
143Cited by
13References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 8, 1992 |
| Grant date | Jun 13, 1995 |
| Priority date | — |
| Expiry date | Sep 8, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3347
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of etching an oxide over a nitride with high selectivity comprising plasma etching the oxide with a carbon and fluorine-containing etchant gas in the presence of a scavenger for fluorine, thereby forming a carbon-rich polymer which passivates the nitride. This polymer is inert to the plasma etch gases and thus provides high selectivity to the etch process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.