Control of particle generation within a reaction chamber
US5456796A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1993 |
| Grant date | Oct 10, 1995 |
| Priority date | — |
| Expiry date | Jun 2, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/905
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An RF signal is rapidly brought to a high power level prior to the introduction of a wafer into the reaction chamber to initiate a plasma that agitates and circulates any particles within the reaction chamber, thereby allowing effective reaction chamber cleaning; and an RF signal is slowly brought to a high power level to initiate a plasma prior to or during wafer processing to avoid disturbing and circulating such particles during wafer processing, thereby preventing particle induced contamination. A magnetic field may be applied to the reaction chamber to move particles from a plasma sheath/glow region interface to a reaction chamber exhaust line, and thereby prevent such particles from falling onto a processed wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.