Pretreatment process for treating aluminum-bearing surfaces of deposition chamber prior to deposition of tungsten silicide coating on substrate therein
US5482749A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1994 |
| Grant date | Jan 9, 1996 |
| Priority date | — |
| Expiry date | Dec 23, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4404
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is disclosed for pretreating aluminum-bearing surfaces in a vacuum deposition chamber after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on substrates in the chamber, which first comprises treating the aluminum-bearing surfaces with a mixture of silane and a tungsten-bearing gas, such as WF.sub.6, to form a first deposition of a silane-based tungsten silicide on the aluminum-bearing surfaces. In a preferred embodiment, the process further comprises subsequently treating the already coated aluminum-bearing surfaces of the chamber in a second step with a mixture of a tungsten-bearing gas, such as WF.sub.6, and a chlorine-substituted silane such as dichlorosilane (SiH.sub.2 Cl.sub.2), monochlorosilane (SiH.sub.3 Cl), or trichlorosilane (SiHCl.sub.3) to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited silane-based tungsten silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.