Controlling plasma particulates by contouring the plasma sheath using materials of differing RF impedances
US5494523A · kind A · utility
34Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1995 |
| Grant date | Feb 27, 1996 |
| Priority date | — |
| Expiry date | Feb 23, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32431
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus including a wafer supporting pedestal which is designed to reduce particle trapping phenomena. In a region of the pedestal surface which surrounds or abuts the wafer, the pedestal has a permittivity which is substantially equal to or greater than that of the wafer surface. As a result, the sheath boundary is reshaped to reduce particle trapping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.