Group III nitride compound semiconductor laser diode and method for producing same
US5604763A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Apr 19, 1995 |
| Grant date | Feb 18, 1997 |
| Priority date | — |
| Expiry date | Apr 19, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An improved laser diode is made of a gallium nitride compound semiconductor ((Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N; 0.ltoreq.x.ltoreq.1; 0.ltoreq.x.ltoreq.1) with a double heterojunction structure having the active layer held between layers having a greater band gap. The laser diode comprises mirror surfaces formed by cleaving the multi-layered coating and the sapphire substrate in directions parallel to <0001> (c axis) of the sapphire substrate. The intermediate zinc oxide (ZnO) layer is selectively removed by wet etching with a ZnO-selective liquid etchant so as to form gaps between the sapphire substrate and the bottom-most sub-layer of the semiconductor laser element layer. The semiconductor laser element layer is cleaved with the aid of the gaps, and the resulting planes of cleavage are used as the mirror surfaces of the laser cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.