High-frequency semiconductor wafer processing apparatus and method
US5618382A · kind A · utility
79Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 1993 |
| Grant date | Apr 8, 1997 |
| Priority date | — |
| Expiry date | Jun 25, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/051
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma process apparatus capacitor operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.