Chemical vapor deposition chamber
US5695568A · kind A · utility
80Cited by
25References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 1994 |
| Grant date | Dec 9, 1997 |
| Priority date | — |
| Expiry date | Feb 23, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, which is supported by a stem having a heat limiting member and a shroud to protect the stem and a positioning assembly aligns the substrate to the receiving plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.