Semiconductor interlevel dielectric having a polymide for producing air gaps

US5783481A · kind A · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• William S. Brennan · Austin, US
• Robert Dawson · Austin, US
• H. Jim Fulford · Austin, US
• Fred N. Hause · Austin, US
• Basab Bandyopadhyay · Austin, US
• Mark W. Michael · Cedar Park, US

Key dates

• Filing date: Jun 5, 1996
• Grant date: Jul 21, 1998
• Expiry date: Jun 5, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A dielectric material is provided having air gaps which form during dielectric deposition between horizontal or vertical spaced conductors. The dielectric is deposited upon a polyimide, wherein the polyimide is placed over and between an underlying level of conductors. As the overlying dielectric is deposited on the polyimide, the polyimide material outgasses to form air separation between the polyimide and dielectric. Air separation is particularly prevalent in regions between closely spaced conductors and in high elevational areas directly above each conductor. The dielectric deposition process preferably includes two deposition cycles. A first deposition temperature is used to force significant outgassing, and a second deposition cycle is needed to close any and all keyhole openings which might exist between closely spaced conductors. A combination of polyimide, air gaps (air-filled cavities) and deposited dielectric forms an inter-level dielectric structure having a low dielectric permittivity or dielectric constant in critical conductor spaces.