William S. Brennan
57Patents
17h-index
36Co-inventors
80Inventor score
Filing activity: Apr 17, 1996 → May 7, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6955928B1 | Closed loop residual gas analyzer process control technique | Electricity | 383 | Expired |
| US5850105A | Substantially planar semiconductor topography using dielectrics and chemical mechanical polish | Electricity | 261 | Expired |
| US5953626A | Dissolvable dielectric method | Electricity | 110 | Expired |
| US5759913A | Method of formation of an air gap within a semiconductor dielectric by solvent desorption | Electricity | 99 | Expired |
| US5827776A | Method of making an integrated circuit which uses an etch stop for producing staggered interconnect lines | Electricity | 79 | Expired |
| US5792706A | Interlevel dielectric with air gaps to reduce permitivity | Electricity | 63 | Expired |
| US5783864A | Multilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnect | Electricity | 55 | Expired |
| US5899727A | Method of making a semiconductor isolation region bounded by a trench and covered with an oxide to improve planarization | Electricity | 45 | Expired |
| US5814555A | Interlevel dielectric with air gaps to lessen capacitive coupling | Electricity | 38 | Expired |
| US5998293A | Multilevel interconnect structure of an integrated circuit having air gaps and pillars separating levels of interconnect | Electricity | 37 | Expired |
| US5926713A | Method for achieving global planarization by forming minimum mesas in large field areas | Electricity | 36 | Expired |
| US6208015A | Interlevel dielectric with air gaps to lessen capacitive coupling | Electricity | 33 | Expired |
| US5846876A | Integrated circuit which uses a damascene process for producing staggered interconnect lines | Electricity | 28 | Expired |
| US5926717A | Method of making an integrated circuit with oxidizable trench liner | Electricity | 27 | Expired |
| US6376330B1 | Dielectric having an air gap formed between closely spaced interconnect lines | Electricity | 26 | Expired |
| US6091149A | Dissolvable dielectric method and structure | Electricity | 25 | Expired |
| US6555479B1 | Method for forming openings for conductive interconnects | Electricity | 18 | Expired |
| US5783481A | Semiconductor interlevel dielectric having a polymide for producing air gaps | Electricity | 17 | Expired |
| US5717242A | Integrated circuit having local interconnect for reduing signal cross coupled noise | Electricity | 16 | Expired |
| US5767012A | Method of forming a recessed interconnect structure | Electricity | 14 | Expired |
| US5968843A | Method of planarizing a semiconductor topography using multiple polish pads | Electricity | 14 | Expired |
| US6255215A | Semiconductor device having silicide layers formed using a collimated metal layer | Electricity | 11 | Expired |
| US6060389A | Semiconductor fabrication employing a conformal layer of CVD deposited TiN at the periphery of an interconnect | Electricity | 11 | Expired |
| US5854131A | Integrated circuit having horizontally and vertically offset interconnect lines | Electricity | 11 | Expired |
| US6067855A | Apparatus and method for measuring liquid level in a sealed container | Physics | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.