High-frequency induction heater and method of producing semiconductor single crystal using the same
US5792258A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1996 |
| Grant date | Aug 11, 1998 |
| Priority date | — |
| Expiry date | Jan 29, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1088
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high-frequency induction heater for use in the growth of a semiconductor single crystal by the FZ method, including a plurality of high-frequency induction heating coils disposed in concentric juxtaposed relation to each other and each having a pair of power supply terminals provided for supplying a high-frequency current to the associated heating coil, with the power supply terminals of one of the heating coils being disposed in a space defined between opposite ends of an adjacent heating coil disposed outside the one heating coil, wherein a pair of electrically conductive members is attached to the pair of power supply terminals, respectively, of at least an innermost one of the heating coils so as to cover a space defined between the power supply terminals of the innermost heating coil. With the induction heater thus constructed, the so-called "pulsation", i.e., microscopic resistivity fluctuations and the macroscopic resistivity distribution in the diametrical and growth directions can be improved at one time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.