Interlevel dielectric with air gaps to reduce permitivity

US5792706A · kind A · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Mark W. Michael · Cedar Park, US
• Robert Dawson · Austin, US
• Fred N. Hause · Austin, US
• Basab Bandyopadhyay · Austin, US
• H. Jim Fulford · Austin, US
• William S. Brennan · Austin, US

Key dates

• Filing date: Jun 5, 1996
• Grant date: Aug 11, 1998
• Expiry date: Jun 5, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A reduced permittivity interlevel dielectric is provided. The interlevel dielectric is formed between two levels of interconnect. The interlevel dielectric comprises a first dielectric layer formed from a TEOS source deposited on a first level interconnect. The first dielectric contains air gaps at spaced intervals across the first dielectric. A second dielectric, preferably from a silane source is deposited upon said first dielectric. A second interconnect level is then placed on the second dielectric.