Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same
US5801386A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 1996 |
| Grant date | Sep 1, 1998 |
| Priority date | — |
| Expiry date | May 28, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper laminate. Each collector pad is connected to a conductive lead (e.g., a printed circuit trace) that extends from each collector pad to the edge of the first insulator layer. A second insulator layer is positioned above the first insulator layer such that the collector pad(s) and their respective lead(s) are sandwiched between the two insulator layers. An adhesive is used to affix the second insulator to the first insulator and the collector pads. The collector pads are exposed to the plasma through apertures defined by the second insulator layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.