High frequency semiconductor wafer processing apparatus and method
US5849136A · kind A · utility
158Cited by
28References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 1996 |
| Grant date | Dec 15, 1998 |
| Priority date | — |
| Expiry date | Nov 22, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32183
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma process apparatus capable of operation significantly above 13.56 MHz can produce reduced self-bias voltage of the powered electrode to enable softer processes that do not damage thin layers that are increasingly becoming common in high speed and high density integrated circuits. A nonconventional match network is used to enable elimination of reflections at these higher frequencies. Automatic control of match network components enables the rf frequency to be adjusted to ignite the plasma and then to operate at a variable frequency selected to minimize process time without significant damage to the integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.