Plasma reactor and processes using RF inductive coupling and scavenger temperature control
US5888414A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 1997 |
| Grant date | Mar 30, 1999 |
| Priority date | — |
| Expiry date | Sep 24, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F2029/143
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.