Light emitting semiconductor device using nitrogen-Group III compound
US5905276A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 6, 1997 |
| Grant date | May 18, 1999 |
| Priority date | — |
| Expiry date | Nov 6, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
Abstract
Disclosed is a light-emitting semiconductor device which comprises an N-layer of N-type nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, a P-layer of P-type nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 and a Zn doped semi-insulating I-layer of nitrogen-Group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0. The semi-insulating I-layer has a 20 to 3000 .ANG. thickness and can emit light in the range of 485 to 490 nm. By employing the I-layer, the light-emitting diode as a whole can emit light in the range of 450 to 480 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.