Method of channel doping using diffusion from implanted polysilicon

US5918129A · kind A · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• H. Jim Fulford · Austin, US
• Robert Dawson · Austin, US
• Mark I. Gardner · Mabank, US
• Frederick N. Hause · Austin, US
• Mark W. Michael · Cedar Park, US
• Bradley T. Moore · Austin, US
• Derick J. Wristers · Austin, US

Key dates

• Filing date: Feb 25, 1997
• Grant date: Jun 29, 1999
• Expiry date: Feb 25, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of doping an integrated circuit device channel in a semiconductor substrate laterally enclosed by an isolation structure is disclosed. The method includes steps of forming a thin oxide layer overlying the integrated circuit device channel and the isolation structure, depositing a polysilicon blanket layer overlying the thin oxide layer, patterning a photoresist mask overlying the polysilicon blanket layer and implanting dopant impurities into the polysilicon blanket layer. The method further includes steps of diffusing the dopant impurities from the polysilicon blanket layer through the thin oxide layer into the integrated circuit device channel, removing the polysilicon blanket layer, and removing the thin oxide layer.