Method of forming a semiconductor device have a screen stacked cell capacitor
US5933726A · kind A · utility
7Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 1996 |
| Grant date | Aug 3, 1999 |
| Priority date | — |
| Expiry date | Aug 27, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
Abstract
A semiconductor device, such as a dynamic RAM, and method of making it. A number of stacked cell capacitors are placed at a prescribed spacing in an alignment direction on top of a p.sup.- -type silicon substrate (1). Each capacitor has a nearly perpendicular cylindrical lower electrode (cylindrical polysilicon layer (96)), a dielectric film (silicon nitride film (77)), and upper electrode (plate electrode (78) made of polysilicon). The spacing in the alignment direction is smaller than the inner diameter of the lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.