Method of manufacturing semiconductor integrated circuit devices using phase shifting mask
US5937290A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 27, 1997 |
| Grant date | Aug 10, 1999 |
| Priority date | — |
| Expiry date | May 27, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/942
Abstract
In an embodiment of a method of manufacturing semiconductor integrated circuit devices according to the present invention, word lines are provided in a straight form, which serve as gate electrodes of two selecting MOSFETs formed symmetrical about a center portion of an active region surrounded by a LOCOS oxide film on a semiconductor substrate, and bit lines have straight segments and protruding segments. Each protruding segment is formed to protrude from the bit line and is connected through a first contact hole to a first semiconductor region formed at the center portion of the active region. The straight line segments and the protruding segments are formed separately by two separate exposure steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.