Simplified shallow trench isolation formation with no polish stop
US5970362A · kind A · utility
10Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1997 |
| Grant date | Oct 19, 1999 |
| Priority date | — |
| Expiry date | Dec 18, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76232
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulated trench isolation structure is formed in a semiconductor substrate omitting a barrier nitride polish stop layer, thereby simplifying the formation of the trench isolating structure, and enabling the substrate to be polished substantially flush with the trench fill. The planar trench fill-substrate interface avoids additional topography, thereby facilitating application of, and enhancing the accuracy of, photolithographic techniques in forming features with minimal dimensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.