Microwave plasma processor
US6016766A · kind A · utility
27Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1997 |
| Grant date | Jan 25, 2000 |
| Priority date | — |
| Expiry date | Dec 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Ionizable gas supplied to an electron cyclotron resonance vacuum plasma processor chamber for semiconductor wafers is excited to a plasma state by microwave energy coupled to the chamber. The level of microwave power reflected from the chamber controls the level of microwave power derived from a source driving the ionizable gas in the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.