Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same
US6025225A · kind A · utility
96Cited by
69References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1998 |
| Grant date | Feb 15, 2000 |
| Priority date | — |
| Expiry date | Jan 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/711
Abstract
A method for forming a trench capacitor. The method includes forming a trench in a semiconductor substrate. A conformal layer of semiconductor material is deposited in the trench. The surface of the conformal layer of semiconductor material is roughened. An insulator layer is formed outwardly from the roughened, conformal layer of semiconductor material. A polycrystalline semiconductor plate is formed outwardly from the insulator layer in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.