Method for fabricating an interconnect structure with hard mask and low dielectric constant materials
US6027995A · kind A · utility
39Cited by
14References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1998 |
| Grant date | Feb 22, 2000 |
| Priority date | — |
| Expiry date | Aug 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect system is provided. The interconnect system includes a silicon substrate and a first dielectric layer formed upon the silicon substrate. The interconnect system also includes a first level of at least two electrically conductive lines formed upon the first dielectric layer. The interconnect system further includes a region of low dielectric constant material formed between the at least two electrically conductive lines. The interconnect system also includes a first hard mask formed upon the polymer region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.