Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing
US6042687A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1997 |
| Grant date | Mar 28, 2000 |
| Priority date | — |
| Expiry date | Jun 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system and method for processing substrates such as by chemical vapor deposition or etching. The system includes a plasma processing chamber, a substrate support for supporting a substrate within the processing chamber, a dielectric member having an interior surface facing the substrate support, the dielectric member forming a wall of the processing chamber, a primary gas supply supplying a primary gas such as process gas into the chamber, a secondary gas supply supplying a secondary gas such as a substantially inert, a substrate passivating or a reactant scavenging gas into the chamber, and an RF energy source such as a planar coil which inductively couples RF energy through the dielectric member and into the chamber to energize the primary gas into a plasma state. The secondary gas is concentrated near the periphery of the substrate, improving etching/deposition uniformity across the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.