Method of manufacturing semiconductor device with increased focus margin
US6060352A · kind A · utility
9Cited by
6References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 28, 1998 |
| Grant date | May 9, 2000 |
| Priority date | — |
| Expiry date | Jan 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
Abstract
A method for fabricating DRAMs each having a COB structure, and the semiconductor device formed by this method, are provided. In one embodiment, the word line and/or bit line is covered with an insulating film having a comparatively small etching rate. Contact holes are formed while being defined by those insulating films in self-alignment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.