High sputter, etch resistant window for plasma processing chambers
US6074516A · kind A · utility
18Cited by
13References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1998 |
| Grant date | Jun 13, 2000 |
| Priority date | — |
| Expiry date | Jun 23, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32477
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.