Orientless wafer processing on an electrostatic chuck
US6077357A · kind A · utility
52Cited by
2References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 1997 |
| Grant date | Jun 20, 2000 |
| Priority date | — |
| Expiry date | May 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.