Sensitive technique for metal-void detection
US6100101A · kind A · utility
7Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 1998 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Oct 27, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/162
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A categorization of a particular semiconductor wafer based on void size is obtained from sigma data and T0.1% failure data that has been obtained from wafers subjected to isothermal testing. The sigma data and the T0.1% failure data for the particular wafer is compared to stored data corresponding to ranges for sigma and T0.1% data for each of a plurality of void categories, and the particular wafer is categorized based on the stored data. The T0.1% failure data is computed based on a T50% failure data and the sigma value, so that small sample sizes can be utilized to obtain the stored data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.