CVD method of depositing copper films by using improved organocopper precursor blend
US6110530A · kind A · utility
245Cited by
4References
4Claims
0Family size
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Key dates
| Filing date | Jun 25, 1999 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Jun 25, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4485
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1.0 to 5.0 percent by weight of trimethylvinylsilane that is vaporized in a vaporizer, and passed into a chemical vapor deposition chamber. Separately up to about 2 percent by weight of the precursor blend of water vapor is added directly to the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.