Method for forming titanium silicide in situ

US6110821A · kind A · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Gene Y. Kohara · Fremont, US
• Fusen Chen · Dallas, US
• Hyman J. Levinstein · Berkeley Heights, US
• Zheng Xu · Hangzhou City, CN
• Peijun Ding · San Jose, US
• Gongda Yao · Fremont, US
• Hong Mei Zhang · Beijing, CN

Key dates

• Filing date: Jan 27, 1998
• Grant date: Aug 29, 2000
• Expiry date: Jan 27, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76877
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Titanium is sputtered in an ionized metal plasma sputtering chamber to form titanium silicide in situ in the bottom of openings onto silicon in a series of steps that change the temperature and deposition conditions of sputtering. Ionized titanium is sputtered cold, the temperature is rapidly increased by passing argon through the heated substrate support without sputtering, thereby initiating titanium silicide formation, and then the sputtering of titanium ions is continued at high temperatures to deposit titanium silicide. To deposit titanium silicide in very high aspect ratio openings, a first layer of titanium atoms is sputter deposited in conventional manner to line the sidewalls of the openings, followed by sputtering from a plasma and continuing with the above process.