Method and apparatus for in situ anneal during ion implant
US6111260A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1997 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Jun 10, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/316
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
During a semiconductor substrate ion implant process thermal energy is supplied to raise the temperature of the semiconductor wafer. The increased temperature of the semiconductor wafer during implantation acts to anneal the implanted impurities or dopants in the wafer, reducing impurity diffusion and reducing the number of fabrication process steps. An ion implant device includes an end station that is adapted for application and control of thermal energy to the end station for raising the temperature of a semiconductor substrate wafer during implantation. The adapted end station includes a heating element for heating the semiconductor substrate wafer, a thermocouple for sensing the temperature of the semiconductor substrate wafer, and a controller for monitoring the sensed temperature and controlling the thermal energy applied to the semiconductor substrate wafer by the heating element. An ion implant device including a system for applying and controlling thermal energy applied to a semiconductor substrate wafer during ion implantation raises the temperature of the wafer to a temperature that is sufficient to activate impurities within the semiconductor substrate wafer when an io…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.