Method for implanting semiconductor conductive layers
US6117770A · kind A · utility
31Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1998 |
| Grant date | Sep 12, 2000 |
| Priority date | — |
| Expiry date | Oct 8, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for implanting copper conductive layers in channel or via openings with alloying elements, such as magnesium, boron, tin, and zirconium. The implantation is performed after conductive layer chemical-mechanical-polishing (CMP) using a surface barrier layer as an implant barrier. With the surface barrier layer being removed by barrier layer CMP, this allows directed, heavy implantation of the conductive layer with the alloying elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.