Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition
US6120846A · kind A · utility
57Cited by
4References
33Claims
0Family size
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Key dates
| Filing date | Dec 23, 1997 |
| Grant date | Sep 19, 2000 |
| Priority date | — |
| Expiry date | Dec 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02197
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is described for the selective deposition of bismuth based ferroelectric films by selective chemical vapor deposition on a substrate. Selectivity in the deposition process is attained by selection of substrate-precursor combinations which assure high bismuth deposition efficiency in certain areas and low bismuth deposition efficiency in other areas in combination with specific process parameters.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.