Method of controllably forming a LOCOS oxide layer over a portion of a vertically extending sidewall of a trench extending into a semiconductor substrate
US6153474A · kind A · utility
17Cited by
20References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 1998 |
| Grant date | Nov 28, 2000 |
| Priority date | — |
| Expiry date | Jul 1, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention includes a method and system to increase the deep trench sidewall surface area in a storage node on a DRAM chip. By tilting the trenches the capacitance is increased without taking up more space on the semiconductor chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.