Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates
US6180420A · kind A · utility
7Cited by
3References
71Claims
0Family size
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Key dates
| Filing date | Dec 9, 1998 |
| Grant date | Jan 30, 2001 |
| Priority date | — |
| Expiry date | Dec 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one carboxylate group and is decomposed and deposited at a temperature lower than 450.degree. C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.