Method of forming a MOSFET transistor with a shallow abrupt retrograde dopant profile
US6184112A · kind A · utility
127Cited by
10References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 2, 1998 |
| Grant date | Feb 6, 2001 |
| Priority date | — |
| Expiry date | Dec 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In accordance with the present invention, an amorphous layer is formed in a crystalline substrate (e.g., the channel region of a MOSFET transistor) by, for example, implanting ions of an inert specie such as germanium. A dopant is implanted so that it overlaps with the amorphous layer. Subsequently, low temperature recrystallization of the amorphous layer leads to an abrupt retrograded layer of active dopant in the channel region of the MOSFET. This retrograded dopant layer could be formed before or after the formation of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.