Quantum conductive recrystallization barrier layers
US6194736A · kind A · utility
8Cited by
18References
31Claims
0Family size
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Key dates
| Filing date | Dec 17, 1998 |
| Grant date | Feb 27, 2001 |
| Priority date | — |
| Expiry date | Dec 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Reduced scale structures of improved reliability and/or increased composition options are enabled by the creation and use of quantum conductive recrystallization barrier layers. The quantum conductive layers are preferably used in trench capacitors to act as recrystallization barriers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.