Light floating gate doping to improve tunnel oxide reliability
US6232630A · kind A · utility
3Cited by
5References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1999 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Jul 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6891
Abstract
The reliability of a tunnel oxide is improved by light doping of the floating gate, as with phosphorous or arsenic atoms. Doping can be implemented by ion implantation or by in situ deposition. The relatively low dopant concentration further enhances charge retention on the floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.