Magnetic element with dual magnetic states and fabrication method thereof
US6233172A · kind A · utility
153Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1999 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Dec 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved and novel magnetic element (10; 10'; 50; 50'; 80) including a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field. Additionally disclosed is a method of fabricating a magnetic element (10) by providing a plurality of thin film layers wherein the bit end magneto-static demagnetizing fields of the thin film layers cancel the total positive coupling of the structure to obtain dual magnetic states in a zero external field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.