Process for depositing a plasma polymerized organosilicon photoresist film
US6238844A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 1999 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Feb 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31133
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for patterning a feature on a substrate using; a plasma polymerized methylsilane (PPMS) photoresist layer or similar organosilicon film. The process includes the step of depositing a PPMS film having upper and lower strata such that the upper stratum is more photosensitive to ultraviolet radiation than is the lower stratum. In one embodiment, the upper and lower strata are formed in a multistep deposition process that, preferably, takes place in a single deposition chamber. In another embodiment, the upper and lower strata are formed by a process in which deposition parameters are modified to deposit a PPMS layer having a photosensitivity gradient between the upper and lower strata. In still another embodiment, various intermediate strata are formed. Preferably, each intermediate stratums has a photosensitivity that is higher than the stratum directly beneath it. Also disclosed is a process for etching a PPMS layer that increases the etch selectivity of PPMS relative to PPMSO from an initial low etch selectivity to a higher etch selectivity at a later stage of the etching process. In one currently preferred embodiment, the etch selectivity used during a first etching step…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.