Plasma treatment to reduce stress corrosion induced voiding of patterned metal layers

US6251776A · kind A · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Minh Van Ngo · Fremont, US
• Simon S. Chan · Saratoga, US
• Anne E. Sanderfer · Campbell, US
• King Wai Kelwin Ko · San Jose, US

Key dates

• Filing date: Apr 2, 1999
• Grant date: Jun 26, 2001
• Expiry date: Apr 2, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02054
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Stress corrosion induced voiding of patterned metal layers is avoided or substantially reduced by removing etching residues before gap filling. Embodiments include etching an Al or Al alloy layer employing fluorine and/or chlorine chemistry, wet cleaning, treating with a plasma containing ammonia or ammonia and oxygen at a temperature of at least about 400.degree. C. and gap filling with a dielectric material, e.g. HDP oxide by HDP CVD.