Method for single chamber processing of PECVD-Ti and CVD-TiN films for integrated contact/barrier applications in IC manufacturing
US6274496A · kind A · utility
354Cited by
7References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 2000 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Apr 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single chamber method for depositing a stack including titanium and titanium nitride on a wafer surface. Titanium is deposited by plasma enhanced chemical vapor deposition and then plasma nitrided. Titanium nitride is subsequently deposited by a thermal chemical vapor deposition process. Advantageously, the temperatures of the substrate and showerhead as well as the internal chamber pressure are maintained at substantially constant values throughout deposition of the stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.