Spin-rinse-drying process for electroplated semiconductor wafers
US6290865A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 1998 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Nov 30, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/928
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention removes unwanted deposited material from a substrate backside by chemically dissolving the material, while substantially preventing dissolution of the material from the substrate front side. Preferably, the dissolving process is included with a spin-rinse-dry process and uses a greater flow rate of rinsing fluid directed onto the front side compared to the flow rate of dissolving fluid directed onto a substrate backside to protect the substrate front side while the unwanted backside material is removed. The present invention includes the method of dissolving the unwanted material from the backside and edge and the associated apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.