Endpoint monitoring with polishing rate change
US6309276A · kind A · utility
51Cited by
18References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2000 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Feb 1, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A substrate with a first layer disposed on a second layer is chemically mechanically polished. A polishing endpoint detection system generates a signal that is monitored for an endpoint criterion. The polishing rate of the substrate is reduced when the bulk of the first layer has been removed but before the second layer is exposed. For example, the polishing rate is reduced when the polishing time approaches an expected polishing end time but before the endpoint criterion is detected. Polishing stops once the endpoint criterion is detected after the underlying layer has been exposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.