Formation of self-aligned passivation for interconnect to minimize electromigration
US6309959A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2000 |
| Grant date | Oct 30, 2001 |
| Priority date | — |
| Expiry date | Aug 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76888
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect opening of an integrated circuit is filled with a conductive fill with the interconnect opening being within an insulating layer on a semiconductor wafer. A seed layer of a first conductive material is deposited conformally onto sidewalls and a bottom wall of the interconnect opening. The interconnect opening is further filled with a second conductive material by growing the second conductive material from the seed layer to form a conductive fill of the first conductive material and the second conductive material within the interconnect opening. The first conductive material and the second conductive material are comprised of a bulk metal, and at least one of the first conductive material and the second conductive material is a metal alloy having an alloy dopant in the bulk metal. In addition, a plasma treatment process is performed to remove any metal oxide or metal hydroxide from a top surface of the conductive fill. A self-aligned passivation material of an intermetallic compound or a metal oxide is formed at the top surface of the conductive fill with the alloy dopant that segregates out and to the top surface of the conductive fill. The intermetallic compound o…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.