Ionized metal plasma Ta, TaNx, W, and WNx liners for gate electrode applications
US6313033A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1999 |
| Grant date | Nov 6, 2001 |
| Priority date | — |
| Expiry date | Jul 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for forming a microelectronic device comprising: forming a first electrode; depositing an adhesion layer over the first electrode utilizing high density plasma physical vapor deposition, wherein the adhesion layer comprises a material selected from Ta, TaN.sub.x, W, WN.sub.x, Ta/TaN.sub.x, W/WN.sub.x, and combinations thereof, depositing a dielectric layer over the adhesion layer; and forming a second electrode over the dielectric layer. The invention also provides a microelectronic device comprising: a first electrode; a second electrode; a dielectric layer disposed between the first and second electrodes; and an adhesion layer disposed between the first electrode and the dielectric layer, wherein the adhesion layer comprises a material selected from Ta, TaN.sub.x, W, WN.sub.x, Ta/TaN.sub.x, W/WN.sub.x, and combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.