Bingxi Sun
10Patents
9h-index
5Co-inventors
57Inventor score
Filing activity: Feb 6, 1997 → Apr 22, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6066892A | Copper alloy seed layer for copper metallization in an integrated circuit | Electricity | 107 | Expired |
| US6037257A | Sputter deposition and annealing of copper alloy metallization | Electricity | 84 | Expired |
| US6387805B2 | Copper alloy seed layer for copper metallization | Electricity | 44 | Expired |
| US6160315A | Copper alloy via structure | Electricity | 38 | Expired |
| US6174811A | Integrated deposition process for copper metallization | Electricity | 27 | Expired |
| US6566259B1 | Integrated deposition process for copper metallization | Electricity | 19 | Expired |
| US6313033A | Ionized metal plasma Ta, TaNx, W, and WNx liners for gate electrode applications | Electricity | 19 | Expired |
| US6217715A | Coating of vacuum chambers to reduce pump down time and base pressure | Electricity | 18 | Expired |
| US6488823B1 | Stress tunable tantalum and tantalum nitride films | Electricity | 17 | Expired |
| US6881673B2 | Integrated deposition process for copper metallization | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.